It also has decent switching characteristics so can amplify lowlevel signals. Vcbo 180v, vceo 160v low collector saturation voltage. Jan 14, 2020 a very simple bare minimum circuit for a transistor to work as an amplifier is shown below. Bsc high voltage npn transistor for general purpose and. Jun 25, 2019 2n5551 datasheet, equivalent, cross reference search here the input sine wave of magnitude 8mv yellow colour is amplified to 50mv pink colour as shown in the graph. The 2n5551 is an npn amplifier transistor with an amplification factor of 80 when the collector current is 10ma. May 17, 2019 2n5401 datasheet pdf, 2n5401 datasheet, 2n5401 pdf, pinouts, circuit, ic, manual, 2n5401 substitute, parts, 2n5401 datenblatt, schematic, reference. Free devices maximum ratings rating symbol value unit collector. Jul 09, 2019 2n5551 transistor pdf 2n from on semiconductor specification.
Please consult the most recently issued document before initiating or completing a design. The 2n5551 is a 160v npn bipolar transistor capable of 625mw power dissipation and 600ma collector current. As part of the fairchild semiconductor integration, some of the fairchild orderable part numbers will need to change in order to meet on semiconductors system requirements. H absolute maximum ratings ta25 c, unless otherwise specified parameter symbol ratings unit collectorbase voltage vcbo 180 v collectoremitter voltage vceo 160 v emitterbase voltage vebo 6 v to92 625 mw collector dissipation sot89 pc 500 mw. Since the on semiconductor product management systems do not have the ability to manage part nomenclature that utilizes an underscore. Transistor datasheet, transistor pdf, transistor data sheet, datasheet, data sheet, pdf. The product status of the devices described in this data sheet may have changed since this data sheet was published. Supersedes data of apr oct discrete semiconductors. This means that the collector current will be amplified by 80 times than that of the base current. They are designed for audio amplifiers and drivers utilizing complementary or quasicomplementary circuits. Npn highvoltage transistor pmbt5551 data sheet status notes 1. Datasheet identification product status definition advance information formative or in design this datasheet contains the design specifications for product development.
Vceo 50 v min, ic 150 ma max excellent hfe linearity. Internal schematic diagram features hermetic packages escc and jans qualified up to 100 kradsi low dose rate description the 2n5551hr is a silicon planar npn transistor specifically designed and housed in hermetic packages for aerospace and hirel. Onsemi, alldatasheet, datasheet, datasheet search site for electronic. Vceo160v high current gain applications telephone switching circuit amplifier ordering information ordering number pin assignment package packing lead free. Specifications may change in any manner without notice. Emitter voltage 2n5550 2n5551 vceo 140 160 vdc collector. Due to this feature, the transistor is commonly used for amplification of audio or other low power signals. Mar 08, 2019 2n5551 datasheet, equivalent, cross reference search submitted by webmaster on 21 december how to use 2n this output voltage depends on the input voltage vcc, here 12v without the voltage drop across the loads resistor r1. Toshiba transistor silicon npn epitaxial type pct process 2sc1815 audio frequency general purpose amplifier applications driver stage amplifier applications high voltage and high current. Mmbt5551 sot23 2n5551 smd npn high voltage transistor g1 marking. Ja thermal resistance, junction to ambient 200 357 cw c b e to92 c b e sot23 mark.
Boca npn epitaxial planar silicon high voltage transistor,alldatasheet, datasheet, datasheet search site for electronic components and. Complementary low voltage transistor features products are preselected in dc current gain application general purpose description these epitaxial planar transistors are mounted in the sot32 plastic package. A transistor is normally a current amplifier, meaning the current flowing 2m5551 the base will be amplified in the current flowing through the collector. Free packages are available maximum ratings rating symbol value unit collector.
The product status of devices described in this document may have changed since this document was published and may differ in case of multiple devices. Npn epitaxial planar silicon high voltage transistor, 2n5551 pdf download, 2n5551 download, 2n5551 down, 2n5551 pdf down, 2n5551 pdf download, 2n5551 datasheets, 2n5551 pdf, 2n5551 circuit. Onsemi mplifier transistors npn silicon,alldatasheet, datasheet, datasheet search site for electronic components and semiconductors, integrated circuits, diodes, triacs, and other semiconductors. Btmapril 20062n5551 mmbt5551npn general purpose amplifierfeatures this device is designed for general purpose high voltage amplifiers and gas discharge display drivers. Onsemi, alldatasheet, datasheet, datasheet search site for electronic components and semiconductors, integrated circuits, diodes, triacs, and other semiconductors. May 24, 2019 2n5551 datasheet, equivalent, cross reference search. Npn silicon transistor general purpose amplifier high voltage application, 2n5551 pdf download, 2n5551 download, 2n5551 down, 2n5551 pdf down, 2n5551 pdf download, 2n5551 datasheets, 2n5551 pdf, 2n5551 circuit. Ordering information collector 3 2 base 1 emitter 2n 390x yww x 3 or 4 y year ww work week pb. Power transistors npn silicon darlington transistor chip. Semtech npn silicon expitaxial planar transistor for general purpose, high voltage amplifier applications,alldatasheet, datasheet, datasheet search site for electronic components and semiconductors, integrated circuits, diodes, triacs, and other semiconductors. Aug 19, 2019 2n5551 transistor pdf 2n from on semiconductor specification. Description mplifier transistors npn silicon download. Complementary pair with 2n5401 ordering information type no.
C4793 silicon npn epitaxial type transistor components datasheet pdf data sheet free from datasheet data sheet search for integrated circuits ic, semiconductors and other electronic components such as resistors, capacitors, transistors and diodes. A very simple bare minimum circuit for a transistor to work as an amplifier is shown. Base voltage 2n5550 2n5551 vcbo 160 180 vdc emitter. Ldmos rf power field effect transistor 90 w, 869960 mhz. H absolute maximum ratings ta25 c, unless otherwise specified parameter symbol ratings unit collectorbase voltage vcbo 180 v collectoremitter voltage vceo 160 v emitterbase voltage vebo 6 v to92 625 mw. Complementary low voltage transistor stmicroelectronics. Base suffix y means hfe 180240 in 2n5551 test condition. Bipolar bjt single transistor, npn, v, mhz, mw, ma, 80 hfe. Nxp semiconductors product data sheet npn highvoltage transistor pmbt5551 data sheet status notes 1.
Vceo160v high current gain applications telephone switching circuit amplifier ordering information ordering number pin assignment package packing lead free plating halogen free 1 2 3 2n5551lx. Auk npn silicon transistor general purpose amplifier high voltage application,alldatasheet, datasheet, datasheet search site for electronic components and. Amazon renewed refurbished products with a warranty. Absolute maximum ratings ta 25c unless otherwise noted. Kst904 1 2n5551 npn silicon transistor descriptions general purpose amplifier high voltage application features high collector breakdown voltage.
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